1999. 11. 30
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SEMICONDUCTOR
TECHNICAL DATA
KTA1070
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH-DEFINITION CRT DISPLAY
VIDEO OUTPUT APPLICATION.
FEATURES
High Voltage : V
CEO
=-200V.
High Transition Frequency : f
T
=150MHz(Typ.).
Low Collector Output Capacitance : C
ob
=2.6pF(Typ.).
Complementary to KTC3467.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
G
H
K
L
1. EMITTER
2. COLLECTOR
3. BASE
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
1.50
0.10 MAX
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
C
N
G
P
H
H
E
D
H
R
S
12.50 0.50
R
1.00
S
1.15 MAX
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-200
V
Collector-Emitter Voltage
V
CEO
-200
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-100
mA
Pulse
I
cp
-200
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-150V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-200
-
-
V
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-10mA
70
-
240
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-20mA, I
B
=-2mA
-
-
-0.6
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-20mA, I
B
=-2mA
-
-
-1.0
V
Transition Frequency
f
T
V
CE
=-30V, I
C
=-10mA
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-30V, I
E
=0, f=1MHz
-
2.6
-
pF
Reverse Transfer Capacitance
C
re
V
CB
=-30V, I
E
=0, f=1MHz
-
1.7
-
pF
Note : h
FE
Classification 0:70 140 , Y:120 240
1999. 11. 30
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KTA1070
Revision No : 1
COLLECTOR CURRENT I (mA)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
COLLECTOR-EMITTER SATURATION
-0.05
CE(sat)
-10
-3
-1
-0.5
COLLECTOR CURRENT I (mA)
C
V - I
h - I
C
COLLECTOR CURRENT I (mA)
-0.5
-1
-3
-10
FE
DC CURRENT GAIN h
10
BASE-EMITTER VOLTAGE V (V)
C
COLLECTOR CURRENT I (mA)
0
0
BE
I - V
C
BE
BASE-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
-0.5
-1
-3
-10
C
BE(sat)
V - I
-2
-4
-6
-8
-10
-4
-8
-12
-16
-20
COMMON EMITTER
Ta=25 C
I =-20
A
B
I =-40
A
B
I =-60
A
B
I =-80
A
B
I =-100
A
B
I =-120
A
B
-0.2
-0.4
-0.6
-0.8
-1.0
-20
-40
-60
-80
-100
-120
Ta=75
C
T
a=
25
C
Ta
=-2
5
C
COMMON EMITTER
V =-10V
CE
FE
C
-30
-200
30
50
100
300
500
1k
COMMON EMITTER
V =-5V
CE
CE(sat)
C
VOLTAGE V (V)
-30
-100
-0.1
-0.3
-0.5
-1
-3
-5
COMMON EMITTER
I /I =10
Ta=25 C
C B
TRANSITION FREQUENCY f (MHz)
COLLECTOR CURRENT I (mA)
10
30
100
50
C
T
300
1k
500
f - I
T
C
BE(sat)
C
VOLTAGE V (V)
-30
-100
-200
-0.3
-0.5
-1
-3
-5
-10
COMMON EMITTER
I /I =10
Ta=25 C
C B
-100
Ta=75 C
Ta=25 C
Ta=-25 C
-30
-1
-0.5
-10
-3
-200
-100
CE
V =-30V
Ta=25 C
COMMON EMITTER
1999. 11. 30
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KTA1070
Revision No : 1
C
P (W)
0
COLLECTOR POWER DISSIPATION
REVERSE TRANSFER CAPACITANCE
re
COLLECTOR-BASE VOLTAGE V (V)
CB
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
C - V
C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
-0.7
-1
-3
-10
ob
0.3
OUTPUT CAPACITANCED C (pF)
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
-2
C
-5
-10
CE
-30
-100
SAFE OPERATING AREA
ob
CB
-30
-100
0.5
1
3
5
10
I =0
f=1MHz
Ta=25 C
E
re
CB
C (pF)
E
Ta=25 C
f=1MHz
I =0
10
5
3
1
0.5
0.3
-100
-30
-10
-3
-1
-0.7
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
-50
-300
-5
-10
-30
-50
-100
-300
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX(PULSED)
C
*
C
I MAX(CONTINUOUS)
500
S
1m
S
10
mS
DC O
PERATIO
N
*
*
*
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